Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode

The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated through spray pyrolysis deposition at 450 °C aqueous solutions containing magnesium nitrate, zinc acetate, erbium gallium and indium nitrate precursors. effects of layer thickness on the diode properties investigated. For deposited films, a combined tiny hexagonal slices small blocks surface morphology was characterized by scanning electron microscopy for all samples. Diodes formed after In Ag back side top side, respectively. current-voltage characteristics luminescence spectra are studied. With increasing thickness, forward bias resistance increases while reverse biased dark current shows decrease-increase characters. Er ion corresponded green light emission under breakdown condition. increased luminescent intensity low turn-on behaviors 4.9 nm. electrical analysis, effect barrier discussed. improves performance rare earth-related light-emitting devices.